Near infrared filtering properties in photonic crystal containing extrinsic and dispersive semiconductor defect

Chi Chung Liu, Chien Jang Wu*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this work, near infrared filtering properties in a transmission narrowband filter are theoretically investigated. The filter is a defective photonic crystal of (LH)ND(HL)N, where N is the stack number, L is SiO2, H is InP, and defect layer D is an extrinsic semiconductor of n-type silicon (n-Si). It is found that there are multiple transmission peaks within the photonic band gap (PBG) as the defect thickness increases. The filtering position can be changed by varying the doping density in n-Si. That is, the peak (channel) wavelength is blued-shifted when the doping density increases. In the angle-dependent filtering property, the channel wavelength is also blued-shifted as the angle of incidence increases for both TE and TM waves. These filtering properties are of technical use in the applications of semiconductor optoelectronics.

原文英語
頁(從 - 到)359-370
頁數12
期刊Progress in Electromagnetics Research
137
DOIs
出版狀態已發佈 - 2013

ASJC Scopus subject areas

  • 輻射
  • 凝聚態物理學
  • 電氣與電子工程

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