Nature of the 2.8-eV photoluminescence band in Si-doped GaN

H. C. Yang*, T. Y. Lin, Y. F. Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

71 引文 斯高帕斯(Scopus)

摘要

Investigation on the defect-related luminescence centered around 2.8 eV in Si-doped GaN epifilms is presented. It is found that the mechanism of this blue emission (BL) is quite different from that of the yellow luminescence (YL). By comparing the photoluminescence (PL) spectra obtained from either front-side or backside excitation and combining with the results of the BL and YL-related PL excitation and the secondary-ion-mass spectroscopy measurements, we propose that the 2.8-eV emission is the transition from the substitutional oxygen donor (ON) level at 0.25 eV above the conduction band to the VGa-ON complex acceptor. The energy level of the VGa-ON complex is found to be at 0.8 eV above the valence-band edge which is consistent with the theoretical calculation. In addition, we show that the VGa defect plays a key role in the link between the time evolution of the YL and BL spectra in GaN samples.

原文英語
頁(從 - 到)12593-12596
頁數4
期刊Physical Review B - Condensed Matter and Materials Physics
62
發行號19
DOIs
出版狀態已發佈 - 2000 11月 15
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學

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