Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

V. N. Kruchinin; V. Sh Aliev; T. V. Perevalov; D. R. Islamov; V. A. Gritsenko; I. P. Prosvirin; C. H. Cheng; A. Chin

doi:10.1016/j.mee.2015.04.091

Nanoscale potential fluctuation in non-stoichiometric HfO_x and low resistive transport in RRAM

V. N. Kruchinin, V. Sh Aliev, T. V. Perevalov, D. R. Islamov, V. A. Gritsenko^*, I. P. Prosvirin, C. H. Cheng, A. Chin

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

23 引文斯高帕斯（Scopus）

摘要

We study the structure of non-stoichiometric HfO_x films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfO_x, to a first approximation, is a mixture of HfO₂ and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfO_y (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.

原文	英語
頁（從 - 到）	165-167
頁數	3
期刊	Microelectronic Engineering
卷	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.091
出版狀態	已發佈 - 2015 11月 1

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

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10.1016/j.mee.2015.04.091

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title = "Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM",

abstract = "We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.",

keywords = "Hafnium sub-oxides, Nanoscale fluctuations, Percolation, Resistive memory",

author = "Kruchinin, {V. N.} and Aliev, {V. Sh} and Perevalov, {T. V.} and Islamov, {D. R.} and Gritsenko, {V. A.} and Prosvirin, {I. P.} and Cheng, {C. H.} and A. Chin",

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year = "2015",

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doi = "10.1016/j.mee.2015.04.091",

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T1 - Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

AU - Kruchinin, V. N.

AU - Aliev, V. Sh

AU - Perevalov, T. V.

AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Prosvirin, I. P.

AU - Cheng, C. H.

AU - Chin, A.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.

AB - We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.

KW - Hafnium sub-oxides

KW - Nanoscale fluctuations

KW - Percolation

KW - Resistive memory

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DO - 10.1016/j.mee.2015.04.091

M3 - Article

AN - SCOPUS:84928953324

SN - 0167-9317

VL - 147

SP - 165

EP - 167

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

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Nanoscale potential fluctuation in non-stoichiometric HfO_x and low resistive transport in RRAM