@article{a083cfbaddf94553bd773523bef5578e,
title = "Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM",
abstract = "We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.",
keywords = "Hafnium sub-oxides, Nanoscale fluctuations, Percolation, Resistive memory",
author = "Kruchinin, {V. N.} and Aliev, {V. Sh} and Perevalov, {T. V.} and Islamov, {D. R.} and Gritsenko, {V. A.} and Prosvirin, {I. P.} and Cheng, {C. H.} and A. Chin",
note = "Funding Information: This work was particularly supported by the Russian Science Foundation (Grant No. 14-19-00192 ) and the Ministry of Science and Technology (former National Science Council), Taiwan (Grant No. NSC103–2923-E-009-002-MY3 ). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",
year = "2015",
month = nov,
day = "1",
doi = "10.1016/j.mee.2015.04.091",
language = "English",
volume = "147",
pages = "165--167",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
}