Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

V. N. Kruchinin, V. Sh Aliev, T. V. Perevalov, D. R. Islamov, V. A. Gritsenko, I. P. Prosvirin, C. H. Cheng, A. Chin

研究成果: 雜誌貢獻期刊論文同行評審

14 引文 斯高帕斯(Scopus)

摘要

We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.

原文英語
頁(從 - 到)165-167
頁數3
期刊Microelectronic Engineering
147
DOIs
出版狀態已發佈 - 2015 十一月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

指紋

深入研究「Nanoscale potential fluctuation in non-stoichiometric HfO<sub>x</sub> and low resistive transport in RRAM」主題。共同形成了獨特的指紋。

引用此