A nanoelectronic device consisting of a Si Nx SiSi Nx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300 K. The device features an ultrasmall quantum dot of size ∼10×10×3 nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id - Vd and Id - Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)