Nanopillar transistors exhibiting single-electron quantum effects at room temperature

Yue Min Wan, Heng Tein Lin, Chin Lung Sung, Shu Fen Hu

研究成果: 雜誌貢獻文章同行評審

9 引文 斯高帕斯(Scopus)

摘要

A nanoelectronic device consisting of a Si Nx SiSi Nx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300 K. The device features an ultrasmall quantum dot of size ∼10×10×3 nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id - Vd and Id - Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.

原文英語
文章編號123506
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
87
發行號12
DOIs
出版狀態已發佈 - 2005 九月 19

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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