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Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

  • Y. J. Lee*
  • , T. C. Lu
  • , H. C. Kuo
  • , S. C. Wang
  • , T. C. Hsu
  • , M. H. Hsieh
  • , M. J. Jou
  • , B. J. Lee
  • *此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

15   !!Link opens in a new tab 引文 斯高帕斯(Scopus)

摘要

A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED.

原文英語
頁(從 - 到)157-160
頁數4
期刊Materials Science and Engineering: B
138
發行號2
DOIs
出版狀態已發佈 - 2007 3月 25
對外發佈

ASJC Scopus subject areas

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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