Nano-crystallized titanium oxide resistive memory with uniform switching and long endurance

Chun-Hu Cheng*, Albert Chin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

摘要

We report a novel resistive random access memory using tri-layer dielectrics of GeO x /nano-crystal TiO2/TaON and low cost top Ni and bottom TaN electrodes. Excellent device performance of ultra-low 720 fJ switching energy, tight distributions of set/reset currents, and exceptionally long endurance of 5×109 cycles were achieved simultaneously. Such excellent endurance may create new applications such as those used for Data Centers that are ascribed to the higher-κ nano-crystal TiO2, hopping pass via grain boundaries, and fast switching speed of 100 ns to improve the dielectric fatigue during endurance stress.

原文英語
頁(從 - 到)203-207
頁數5
期刊Applied Physics A: Materials Science and Processing
111
發行號1
DOIs
出版狀態已發佈 - 2013 四月 1

ASJC Scopus subject areas

  • 化學 (全部)
  • 材料科學(全部)

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