We report a novel resistive random access memory using tri-layer dielectrics of GeO x /nano-crystal TiO2/TaON and low cost top Ni and bottom TaN electrodes. Excellent device performance of ultra-low 720 fJ switching energy, tight distributions of set/reset currents, and exceptionally long endurance of 5×109 cycles were achieved simultaneously. Such excellent endurance may create new applications such as those used for Data Centers that are ascribed to the higher-κ nano-crystal TiO2, hopping pass via grain boundaries, and fast switching speed of 100 ns to improve the dielectric fatigue during endurance stress.
|頁（從 - 到）||203-207|
|期刊||Applied Physics A: Materials Science and Processing|
|出版狀態||已發佈 - 2013 四月 1|
ASJC Scopus subject areas
- 化學 (全部)