Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng*, T. R. Yang, J. Zhao, R. P.G. Karunasiri, W. Lu, W. E. Collins


研究成果: 會議貢獻類型會議論文同行評審


Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including x-ray diffraction (XRD), photoluminescence (PL), Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-xGex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. Ion channeling indicated good crystalline perfection. Raman spectra exhibited the characteristic Ge-Ge and Ge-Si vibration modes and the Ge-Si alloying features. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth. SIMS depth profiles showed that the cap Si/SiGe interfaces are sharp with slight Ge interdiffusion only.

出版狀態已發佈 - 2004
事件SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, 美国
持續時間: 2004 10月 32004 10月 8


其他SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
城市Honolulu, HI

ASJC Scopus subject areas

  • 一般工程


深入研究「Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures」主題。共同形成了獨特的指紋。