Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng; T. R. Yang; J. Zhao; R. P.G. Karunasiri; W. Lu; W. E. Collins

Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng^*, T. R. Yang, J. Zhao, R. P.G. Karunasiri, W. Lu, W. E. Collins

^*此作品的通信作者

物理學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

Si_1-xGe_x layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including x-ray diffraction (XRD), photoluminescence (PL), Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si_1-xGe_x layer. The Ge compositions and layer thicknesses were precisely determined by RBS. Ion channeling indicated good crystalline perfection. Raman spectra exhibited the characteristic Ge-Ge and Ge-Si vibration modes and the Ge-Si alloying features. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth. SIMS depth profiles showed that the cap Si/SiGe interfaces are sharp with slight Ge interdiffusion only.

原文	英語
頁面	149-158
頁數	10
出版狀態	已發佈 - 2004
事件	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, 美国持續時間: 2004 10月 3 → 2004 10月 8

其他

其他	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
國家/地區	美国
城市	Honolulu, HI
期間	2004/10/03 → 2004/10/08

ASJC Scopus subject areas

一般工程

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引用此

@conference{173b42e32f5447e7afb11b429be5382b,

title = "Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures",

abstract = "Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including x-ray diffraction (XRD), photoluminescence (PL), Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-xGex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. Ion channeling indicated good crystalline perfection. Raman spectra exhibited the characteristic Ge-Ge and Ge-Si vibration modes and the Ge-Si alloying features. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth. SIMS depth profiles showed that the cap Si/SiGe interfaces are sharp with slight Ge interdiffusion only.",

author = "Feng, {Z. C.} and Yang, {T. R.} and J. Zhao and Karunasiri, {R. P.G.} and W. Lu and Collins, {W. E.}",

year = "2004",

language = "English",

pages = "149--158",

note = "SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - CONF

T1 - Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures

AU - Feng, Z. C.

AU - Yang, T. R.

AU - Zhao, J.

AU - Karunasiri, R. P.G.

AU - Lu, W.

AU - Collins, W. E.

PY - 2004

Y1 - 2004

N2 - Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including x-ray diffraction (XRD), photoluminescence (PL), Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-xGex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. Ion channeling indicated good crystalline perfection. Raman spectra exhibited the characteristic Ge-Ge and Ge-Si vibration modes and the Ge-Si alloying features. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth. SIMS depth profiles showed that the cap Si/SiGe interfaces are sharp with slight Ge interdiffusion only.

AB - Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including x-ray diffraction (XRD), photoluminescence (PL), Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-xGex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. Ion channeling indicated good crystalline perfection. Raman spectra exhibited the characteristic Ge-Ge and Ge-Si vibration modes and the Ge-Si alloying features. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth. SIMS depth profiles showed that the cap Si/SiGe interfaces are sharp with slight Ge interdiffusion only.

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M3 - Paper

AN - SCOPUS:17044382218

SP - 149

EP - 158

T2 - SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures

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