Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng, Tzuen-Rong Yang, J. Zhao, R. P.G. Karunasiri, W. Lu, W. E. Collins

研究成果: 會議貢獻類型會議論文同行評審

摘要

Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including x-ray diffraction (XRD), photoluminescence (PL), Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-xGex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. Ion channeling indicated good crystalline perfection. Raman spectra exhibited the characteristic Ge-Ge and Ge-Si vibration modes and the Ge-Si alloying features. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth. SIMS depth profiles showed that the cap Si/SiGe interfaces are sharp with slight Ge interdiffusion only.

原文英語
頁面149-158
頁數10
出版狀態已發佈 - 2004 十二月 1
事件SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, 美国
持續時間: 2004 十月 32004 十月 8

其他

其他SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
國家美国
城市Honolulu, HI
期間2004/10/032004/10/08

ASJC Scopus subject areas

  • Engineering(all)

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