Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including x-ray diffraction (XRD), photoluminescence (PL), Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-xGex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. Ion channeling indicated good crystalline perfection. Raman spectra exhibited the characteristic Ge-Ge and Ge-Si vibration modes and the Ge-Si alloying features. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth. SIMS depth profiles showed that the cap Si/SiGe interfaces are sharp with slight Ge interdiffusion only.
|出版狀態||已發佈 - 2004 十二月 1|
|事件||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, 美国|
持續時間: 2004 十月 3 → 2004 十月 8
|其他||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|期間||2004/10/03 → 2004/10/08|
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