Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Chun Yu Liao; Kuo Yu Hsiang; Zhao Feng Lou; Chen Ying Lin; Yi Ju Tseng; Han Chen Tseng; Zhi Xian Li; Wei Chang Ray; Fu Sheng Chang; Chun Chieh Wang; Tzu Chiang Chen; Chih Sheng Chang; Min Hung Lee

doi:10.1109/TUFFC.2022.3165047

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Chun Yu Liao
, Kuo Yu Hsiang
, Zhao Feng Lou
, Chen Ying Lin
, Yi Ju Tseng
, Han Chen Tseng
, Zhi Xian Li
, Wei Chang Ray
, Fu Sheng Chang
, Chun Chieh Wang
, Tzu Chiang Chen^*
, Chih Sheng Chang^*
, Min Hung Lee^*

^*此作品的通信作者

光電工程研究所暨學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

An ultralow program/erase voltage (VP/E\ = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.

原文	英語
頁（從 - 到）	2214-2221
頁數	8
期刊	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
卷	69
發行號	6
DOIs	https://doi.org/10.1109/TUFFC.2022.3165047
出版狀態	已發佈 - 2022 6月 1

ASJC Scopus subject areas

儀器
聲學與超音波
電氣與電子工程

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10.1109/TUFFC.2022.3165047

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Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Lin, C. Y., Tseng, Y. J., Tseng, H. C., Li, Z. X., Ray, W. C., Chang, F. S., Wang, C. C., Chen, T. C., Chang, C. S., & Lee, M. H. (2022). Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs). IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 69(6), 2214-2221. https://doi.org/10.1109/TUFFC.2022.3165047

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs). / Liao, Chun Yu; Hsiang, Kuo Yu; Lou, Zhao Feng 等.
於: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 卷 69, 編號 6, 01.06.2022, p. 2214-2221.

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

Liao, CY, Hsiang, KY, Lou, ZF, Lin, CY, Tseng, YJ, Tseng, HC, Li, ZX, Ray, WC, Chang, FS, Wang, CC, Chen, TC, Chang, CS & Lee, MH 2022, 'Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)', IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 卷 69, 編號 6, 頁 2214-2221. https://doi.org/10.1109/TUFFC.2022.3165047

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abstract = "An ultralow program/erase voltage (VP/E\textbackslash{} = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.",

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AU - Lin, Chen Ying

AU - Tseng, Yi Ju

AU - Tseng, Han Chen

AU - Li, Zhi Xian

AU - Ray, Wei Chang

AU - Chang, Fu Sheng

AU - Wang, Chun Chieh

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AU - Chang, Chih Sheng

AU - Lee, Min Hung

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AB - An ultralow program/erase voltage (VP/E\ = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.

KW - Antiferroelectric (AFE)

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Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

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