Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Chun Yu Liao, Kuo Yu Hsiang, Zhao Feng Lou, Chen Ying Lin, Yi Ju Tseng, Han Chen Tseng, Zhi Xian Li, Wei Chang Ray, Fu Sheng Chang, Chun Chieh Wang, Tzu Chiang Chen, Chih Sheng Chang, Min Hung Lee*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

An ultralow program/erase voltage (VP/E\ = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.

原文英語
頁(從 - 到)2214-2221
頁數8
期刊IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
69
發行號6
DOIs
出版狀態已發佈 - 2022 6月 1

ASJC Scopus subject areas

  • 儀器
  • 聲學與超音波
  • 電氣與電子工程

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