Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Chun Yu Liao; Kuo Yu Hsiang; Zhao Feng Lou; Chen Ying Lin; Yi Ju Tseng; Han Chen Tseng; Zhi Xian Li; Wei Chang Ray; Fu Sheng Chang; Chun Chieh Wang; Tzu Chiang Chen; Chih Sheng Chang; Min Hung Lee

doi:10.1109/TUFFC.2022.3165047

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Chun Yu Liao, Kuo Yu Hsiang, Zhao Feng Lou, Chen Ying Lin, Yi Ju Tseng, Han Chen Tseng, Zhi Xian Li, Wei Chang Ray, Fu Sheng Chang, Chun Chieh Wang, Tzu Chiang Chen^*, Chih Sheng Chang^*, Min Hung Lee^*

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

An ultralow program/erase voltage (VP/E\ = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.

原文	英語
頁（從 - 到）	2214-2221
頁數	8
期刊	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
卷	69
發行號	6
DOIs	https://doi.org/10.1109/TUFFC.2022.3165047
出版狀態	已發佈 - 2022 6月 1

ASJC Scopus subject areas

儀器
聲學與超音波
電氣與電子工程

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10.1109/TUFFC.2022.3165047

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Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Lin, C. Y., Tseng, Y. J., Tseng, H. C., Li, Z. X., Ray, W. C., Chang, F. S., Wang, C. C., Chen, T. C., Chang, C. S., & Lee, M. H. (2022). Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs). IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 69(6), 2214-2221. https://doi.org/10.1109/TUFFC.2022.3165047

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs). / Liao, Chun Yu; Hsiang, Kuo Yu; Lou, Zhao Feng 等.
於: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 卷 69, 編號 6, 01.06.2022, p. 2214-2221.

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

Liao, CY, Hsiang, KY, Lou, ZF, Lin, CY, Tseng, YJ, Tseng, HC, Li, ZX, Ray, WC, Chang, FS, Wang, CC, Chen, TC, Chang, CS & Lee, MH 2022, 'Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)', IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 卷 69, 編號 6, 頁 2214-2221. https://doi.org/10.1109/TUFFC.2022.3165047

@article{805f2f069ac24921a2dbadd1716ab6c2,

title = "Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)",

abstract = "An ultralow program/erase voltage (VP/E\ = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.",

keywords = "Antiferroelectric (AFE), ferroelectric (FE), field-effect transistor (FET), multilevel",

author = "Liao, {Chun Yu} and Hsiang, {Kuo Yu} and Lou, {Zhao Feng} and Lin, {Chen Ying} and Tseng, {Yi Ju} and Tseng, {Han Chen} and Li, {Zhi Xian} and Ray, {Wei Chang} and Chang, {Fu Sheng} and Wang, {Chun Chieh} and Chen, {Tzu Chiang} and Chang, {Chih Sheng} and Lee, {Min Hung}",

note = "Funding Information: This work was supported in part by the Ministry of Science and Technology (MOST), Taiwan, under Grant 110-2218-E-A49-014-MBK, Grant 110-2218-E-003-005, and Grant 110-2622-8-002-014; and in part by the Taiwan Semiconductor Research Institute (TSRI) and Nano Facility Center (NFC), Taiwan. Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2022",

month = jun,

day = "1",

doi = "10.1109/TUFFC.2022.3165047",

language = "English",

volume = "69",

pages = "2214--2221",

journal = "IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control",

issn = "0885-3010",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

AU - Liao, Chun Yu

AU - Hsiang, Kuo Yu

AU - Lou, Zhao Feng

AU - Lin, Chen Ying

AU - Tseng, Yi Ju

AU - Tseng, Han Chen

AU - Li, Zhi Xian

AU - Ray, Wei Chang

AU - Chang, Fu Sheng

AU - Wang, Chun Chieh

AU - Chen, Tzu Chiang

AU - Chang, Chih Sheng

AU - Lee, Min Hung

N1 - Funding Information: This work was supported in part by the Ministry of Science and Technology (MOST), Taiwan, under Grant 110-2218-E-A49-014-MBK, Grant 110-2218-E-003-005, and Grant 110-2622-8-002-014; and in part by the Taiwan Semiconductor Research Institute (TSRI) and Nano Facility Center (NFC), Taiwan. Publisher Copyright: © 2022 IEEE.

PY - 2022/6/1

Y1 - 2022/6/1

N2 - An ultralow program/erase voltage (VP/E\ = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.

AB - An ultralow program/erase voltage (VP/E\ = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.

KW - Antiferroelectric (AFE)

KW - ferroelectric (FE)

KW - field-effect transistor (FET)

KW - multilevel

UR - http://www.scopus.com/inward/record.url?scp=85127831542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85127831542&partnerID=8YFLogxK

U2 - 10.1109/TUFFC.2022.3165047

DO - 10.1109/TUFFC.2022.3165047

M3 - Article

C2 - 35380960

AN - SCOPUS:85127831542

SN - 0885-3010

VL - 69

SP - 2214

EP - 2221

JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

IS - 6

ER -

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

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