Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2for High-Density Nonvolatile Memory

C. Y. Liao; K. Y. Hsiang; F. C. Hsieh; S. H. Chiang; S. H. Chang; J. H. Liu; C. F. Lou; C. Y. Lin; T. C. Chen; C. S. Chang; M. H. Lee

doi:10.1109/LED.2021.3060589

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂for High-Density Nonvolatile Memory

C. Y. Liao, K. Y. Hsiang, F. C. Hsieh, S. H. Chiang, S. H. Chang, J. H. Liu, C. F. Lou, C. Y. Lin, T. C. Chen, C. S. Chang, M. H. Lee^*

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

49 引文斯高帕斯（Scopus）

摘要

A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as \vert {V}{P/{E}}\vert = {5} V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

原文	英語
文章編號	9358194
頁（從 - 到）	617-620
頁數	4
期刊	IEEE Electron Device Letters
卷	42
發行號	4
DOIs	https://doi.org/10.1109/LED.2021.3060589
出版狀態	已發佈 - 2021 4月

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

存取文件

10.1109/LED.2021.3060589

其它文件與鏈接

引用此

@article{407e9689ace147e59a4037a54cbb60b4,

title = "Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2for High-Density Nonvolatile Memory",

abstract = "A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as \vert {V}{P/{E}}\vert = {5} V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.",

keywords = "FeFET, Multilevel, ferroelectric",

author = "Liao, {C. Y.} and Hsiang, {K. Y.} and Hsieh, {F. C.} and Chiang, {S. H.} and Chang, {S. H.} and Liu, {J. H.} and Lou, {C. F.} and Lin, {C. Y.} and Chen, {T. C.} and Chang, {C. S.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2021",

month = apr,

doi = "10.1109/LED.2021.3060589",

language = "English",

volume = "42",

pages = "617--620",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2for High-Density Nonvolatile Memory

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Hsieh, F. C.

AU - Chiang, S. H.

AU - Chang, S. H.

AU - Liu, J. H.

AU - Lou, C. F.

AU - Lin, C. Y.

AU - Chen, T. C.

AU - Chang, C. S.

AU - Lee, M. H.

PY - 2021/4

Y1 - 2021/4

N2 - A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as \vert {V}{P/{E}}\vert = {5} V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

AB - A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as \vert {V}{P/{E}}\vert = {5} V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

KW - FeFET

KW - Multilevel

KW - ferroelectric

UR - http://www.scopus.com/inward/record.url?scp=85101751495&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85101751495&partnerID=8YFLogxK

U2 - 10.1109/LED.2021.3060589

DO - 10.1109/LED.2021.3060589

M3 - Article

AN - SCOPUS:85101751495

SN - 0741-3106

VL - 42

SP - 617

EP - 620

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

M1 - 9358194

ER -

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2for High-Density Nonvolatile Memory

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂for High-Density Nonvolatile Memory