Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory

C. Y. Liao, K. Y. Hsiang, F. C. Hsieh, S. H. Chiang, S. H. Chang, J. H. Liu, C. F. Lou, C. Y. Lin, T. C. Chen, C. S. Changa, M. H. Lee

研究成果: 雜誌貢獻期刊論文同行評審

摘要

A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as |VP/E| = 5 V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

原文英語
文章編號9358194
頁(從 - 到)617-620
頁數4
期刊IEEE Electron Device Letters
42
發行號4
DOIs
出版狀態接受/付印 - 2021

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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