TY - GEN
T1 - Monte-Carlo Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric HZO considering Mechanisms of Fatigue
AU - Chen, Yu Chen
AU - Hsiang, Kuo Yu
AU - Lee, Min Hung
AU - Su, Pin
N1 - Funding Information:
This work is supported in part by the Ministry of Science and Technology (MOST), Taiwan, under 111-2218-E-A49-016-MBK, 110-2221-E-A49-136-MY2 and 111-2634-F-A49-008, and in part by the "Center for Semiconductor Technology Research" from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education in Taiwan.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - We have conducted an NLS-based Monte-Carlo modeling and characterization for switching dynamics of fatigued antiferroelectric/ferroelectric (AFE/FE)HZO. We have modeled the domain pinning probability considering fatigue mechanisms mediated by oxygen vacancy and charge injection for each orthorhombic-phase and tetragonal-phase grains. Our model has been verified with experimental data, and can be beneficial for future AFE/FE memory applications.
AB - We have conducted an NLS-based Monte-Carlo modeling and characterization for switching dynamics of fatigued antiferroelectric/ferroelectric (AFE/FE)HZO. We have modeled the domain pinning probability considering fatigue mechanisms mediated by oxygen vacancy and charge injection for each orthorhombic-phase and tetragonal-phase grains. Our model has been verified with experimental data, and can be beneficial for future AFE/FE memory applications.
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U2 - 10.1109/IEDM45625.2022.10019378
DO - 10.1109/IEDM45625.2022.10019378
M3 - Conference contribution
AN - SCOPUS:85147502935
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 1341
EP - 1344
BT - 2022 International Electron Devices Meeting, IEDM 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 International Electron Devices Meeting, IEDM 2022
Y2 - 3 December 2022 through 7 December 2022
ER -