Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply

Ya Ju Lee; Zu Po Yang; Pin Guang Chen; Yung An Hsieh; Yung Chi Yao; Ming Han Liao; Min Hung Lee; Mei Tan Wang; Jung Min Hwang

doi:10.1364/OE.26.00A110

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply

Ya Ju Lee^*
, Zu Po Yang
, Pin Guang Chen
, Yung An Hsieh
, Yung Chi Yao
, Ming Han Liao
, Min Hung Lee
, Mei Tan Wang
, Jung Min Hwang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 回顧評介論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].

原文	英語
頁（從 - 到）	A110
期刊	Optics Express
卷	26
發行號	2
DOIs	https://doi.org/10.1364/OE.26.00A110
出版狀態	已發佈 - 2018 1月 22

ASJC Scopus subject areas

原子與分子物理與光學

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10.1364/OE.26.00A110

其它文件與鏈接

引用此

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title = "Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply",

abstract = "We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].",

author = "Lee, \{Ya Ju\} and Yang, \{Zu Po\} and Chen, \{Pin Guang\} and Hsieh, \{Yung An\} and Yao, \{Yung Chi\} and Liao, \{Ming Han\} and Lee, \{Min Hung\} and Wang, \{Mei Tan\} and Hwang, \{Jung Min\}",

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AU - Lee, Ya Ju

AU - Yang, Zu Po

AU - Chen, Pin Guang

AU - Hsieh, Yung An

AU - Yao, Yung Chi

AU - Liao, Ming Han

AU - Lee, Min Hung

AU - Wang, Mei Tan

AU - Hwang, Jung Min

PY - 2018/1/22

Y1 - 2018/1/22

N2 - We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].

AB - We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].

UR - https://www.scopus.com/pages/publications/85040933595

UR - https://www.scopus.com/pages/publications/85040933595#tab=citedBy

U2 - 10.1364/OE.26.00A110

DO - 10.1364/OE.26.00A110

M3 - Review article

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AN - SCOPUS:85040933595

SN - 1094-4087

VL - 26

SP - A110

JO - Optics Express

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Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

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