Engineering
Field-Effect Transistor
100%
Two-Dimensional Materials
100%
Integration
80%
MoS2
60%
Compatibility
60%
Inverter
40%
Three Dimensional Integrated Circuits
40%
Performance
20%
Development
20%
Enhancement
20%
Electric Potential
20%
System Performance
20%
Thickness
20%
Integrated Circuit
20%
Semiconductor
20%
Two Dimensional
20%
Low-Temperature
20%
Scaling
20%
Si Device
20%
Evaporation
20%
Complementary Metal-Oxide-Semiconductor
20%
Building Block
20%
Maximum Gain
20%
Monolayer
20%
Moore's Law
20%
Fin Width
20%
Chemical Mechanical Polishing
20%
INIS
field effect transistors
100%
two-dimensional systems
100%
devices
60%
integrated circuits
60%
compatibility
60%
performance
40%
fins
40%
semiconductor materials
40%
dimensions
20%
gain
20%
industry
20%
mobility
20%
width
20%
evaporation
20%
scaling
20%
voltage
20%
oxides
20%
low temperature
20%
transistors
20%
thickness
20%
metals
20%
electron beams
20%
Material Science
Field Effect Transistor
100%
Two-Dimensional Material
100%
Devices
50%
Electronic Circuit
50%
Inverter
33%
Material
16%
Temperature
16%
Transistor
16%
Monolayers
16%
Semiconductor Material
16%
Complementary Metal-Oxide-Semiconductor Device
16%
Chemical Mechanical Planarization
16%