Modified growth of Ge quantum dots using C 2 H 4 mediation by ultra-high vacuum chemical vapor deposition

S. W. Lee*, P. S. Chen, S. L. Cheng, M. H. Lee, H. T. Chang, C. H. Lee, C. W. Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

C 2 H 4 mediations were used to modify the Stranski-Krastanow growth mode of Ge dots on Si(0 0 1) at 550 °C by ultra-high vacuum chemical vapor deposition. With appropriate C 2 H 4 -mediation to modify the Si surface, the elongated Ge hut clusters can be transformed to highly uniform Ge domes with a high Ge composition at the core. These C 2 H 4 -mediated Ge dots, almost bounded by {1 1 3} facets, have an average diameter and height of 55 and 9 nm, respectively. We propose two major mechanisms to depict the formation of these C 2 H 4 -mediated Ge dots: (i) an almost hydrogen-passivated Si surface to limit the nucleation sites for dot formation, and (ii) the incorporation of Ge atoms, repelled by the C-rich areas, into the existing Ge dots. This work provides a useful scheme to tune the topography of Ge dots in an UHV/CVD condition for possible optoelectronic applications.

原文英語
頁(從 - 到)6261-6264
頁數4
期刊Applied Surface Science
254
發行號19
DOIs
出版狀態已發佈 - 2008 七月 30

ASJC Scopus subject areas

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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