Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs

Chun Yu Lin, Ming Dou Ker

研究成果: 書貢獻/報告類型會議貢獻

摘要

Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.

原文英語
主出版物標題2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
頁面104-107
頁數4
DOIs
出版狀態已發佈 - 2010 十二月 1
事件2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Kaohsiung, 臺灣
持續時間: 2010 十一月 182010 十一月 19

出版系列

名字2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

其他

其他2010 International Symposium on Next-Generation Electronics, ISNE 2010
國家臺灣
城市Kaohsiung
期間10/11/1810/11/19

    指紋

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

引用此

Lin, C. Y., & Ker, M. D. (2010). Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. 於 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program (頁 104-107). [5669189] (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program). https://doi.org/10.1109/ISNE.2010.5669189