Modeling and correlation of gate oxide Q_BD between exponential current ramp and constant current stresses

A simple model and conversion scheme is proposed to correlate Q_BD measured through exponential current ramp stress (ECR) and constant current stress (CCS). Although Q_BD measured via ECR depends on holding time (a power-law dependence) and so does CCS on current density (also a power-law dependence), results from either test at any stress condition can be easily converted to the other with stress condition specified. Experiments with 35angstrom to 135 angstrom oxides demonstrate the capability of the proposed method.