Modeling and correlation of gate oxide QBD between exponential current ramp and constant current stresses

Chuan H. Liu*, Tun Jen Cheng, Mu Chun Wang, S. H. Yang, K. Y. Fu

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

A simple model and conversion scheme is proposed to correlate QBD measured through exponential current ramp stress (ECR) and constant current stress (CCS). Although QBD measured via ECR depends on holding time (a power-law dependence) and so does CCS on current density (also a power-law dependence), results from either test at any stress condition can be easily converted to the other with stress condition specified. Experiments with 35angstrom to 135 angstrom oxides demonstrate the capability of the proposed method.

原文英語
頁(從 - 到)94-95
頁數2
期刊International Symposium on VLSI Technology, Systems, and Applications, Proceedings
出版狀態已發佈 - 1999
事件Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
持續時間: 1999 六月 71999 六月 10

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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