A simple model and conversion scheme is proposed to correlate QBD measured through exponential current ramp stress (ECR) and constant current stress (CCS). Although QBD measured via ECR depends on holding time (a power-law dependence) and so does CCS on current density (also a power-law dependence), results from either test at any stress condition can be easily converted to the other with stress condition specified. Experiments with 35angstrom to 135 angstrom oxides demonstrate the capability of the proposed method.
|頁（從 - 到）||94-95|
|期刊||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|出版狀態||已發佈 - 1999|
|事件||Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan|
持續時間: 1999 六月 7 → 1999 六月 10
ASJC Scopus subject areas