The Ni films replacing photoresist serve as a mask to selectively deposit optical thin films at a substrate temperature of 300°C by an electron-beam gun evaporation. The photolithograph is used to define the growth of Ni films by an electroforming technique. Mosaic patterns with a width of 20μm are chosen as an arrangement of red color filters. The red filters are formed of alternate SiO2 and TiO2 layers and the average transmittance of red filters is larger than 90%. The experimental results successfully illustrate that the combinative uses of photolithography, electroforming and electron-beam gun evaporation can make miniaturized multilayer dielectric coatings with high light transmittance in a hot deposition.