Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology

Ming Hang Wu, Tien Tzu Chang, Jen Hao Cheng, Tian Wei Huang, Jeng Han Tsai

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

This paper presents two miniature fully-integrated CMOS-compatible laterally diffused metal oxide semiconductor (LDMOS) power amplifiers (PAs) in 40-nm CMOS process. Due to the high breakdown voltage characteristic, LDMOS provides superior power density than modern standard CMOS transistor. The capacitive neutralization technique is adopted to improve stability of LDMOS transistor while enhancing the maximum available gain. For low-cost miniaturization, the transformers are utilized in the proposed PAs. Also, efficient power combining and impedance transformation can be realized. The LDMOS PAs achieve saturated output power (Psat) of 26.7 and 26.5 dBm and measured OP1dB of 24.24 and 24.1 dBm at 2.5 and 3.5 GHz, respectively. With compact chip size of 0.318 mm2 and 0.259 mm2, two PAs demonstrate the highest Psat power area density (PAD) of 1467 mW/mm2 and 1724 mW/mm2 at 2.5 and 3.5 GHz among recently reported CMOS PAs.

原文英語
主出版物標題EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
發行者Institute of Electrical and Electronics Engineers Inc.
頁面401-404
頁數4
ISBN(電子)9782874870446
DOIs
出版狀態已發佈 - 2016 12月 7
事件11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, 英国
持續時間: 2016 10月 32016 10月 4

出版系列

名字EuMIC 2016 - 11th European Microwave Integrated Circuits Conference

其他

其他11th European Microwave Integrated Circuits Conference, EuMIC 2016
國家/地區英国
城市London
期間2016/10/032016/10/04

ASJC Scopus subject areas

  • 電氣與電子工程
  • 儀器

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