摘要
The relation between magnetic properties and microscopic structure for a metal/semiconductor system is described. Cobalt films on a CoSi interface possess an in-plane easy axis of magnetization as the result of magnetocrystalline anisotropy of the CoCoSi interface. On a Si(111)-7×7 surface, direct evidence for the formation of CoSi2 compounds at the interface was found by the appearance of doubled spot defects in scanning tunneling microscopic images. The interfacial effects cause the easy axis of magnetization of a CoSi interface to be canted out of plane.
原文 | 英語 |
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文章編號 | 102506 |
期刊 | Applied Physics Letters |
卷 | 88 |
發行號 | 10 |
DOIs | |
出版狀態 | 已發佈 - 2006 |
ASJC Scopus subject areas
- 物理與天文學(雜項)