This paper focuses on a strained Ge channel N type metal-insulator semiconductor transistor and demonstrates the biaxial compressive strain thin Ge films grown on Si substrates by ultra-high vacuum chemical vapor deposition. The performance enhancement is also exhibited. The drive current and subthreshold swing of the strained Ge transistor is seen to be better than the Si control device. The on-off current ratio reaches an order of eight without sacrificing the leakage current. For mobility enhancement, the Ge device exhibits an enhancement greater than 100% compared with the Si device. The development of strained Ge N type and P type metal-insulator semiconductor transistors with thin Ge film for complementary metal-oxide semiconductor (CMOS) technology without the III-V material may allow nanoscale feasibility for future generations and be compatible with current CMOS processes.
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