Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate

Chia Ching Yeo, M. H. Lee, C. W. Liu, K. J. Choi, T. W. Lee, B. J. Cho

研究成果: 書貢獻/報告類型會議論文篇章

摘要

Metal gate/High-K slack CMOSFETs on ultra thin Ge epi channel on relaxed Si, capped with ultra thin Si (Si/Ge/Si substrate) were evaluated. NMOSFET shows enhanced mobility at low field while pMOSFET shows degraded peak mobility, with enhancement observed only at high field.

原文英語
主出版物標題2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
發行者Institute of Electrical and Electronics Engineers Inc.
頁面107-110
頁數4
ISBN(列印)0780393392, 9780780393394
DOIs
出版狀態已發佈 - 2005
對外發佈
事件2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, 香港
持續時間: 2005 12月 192005 12月 21

出版系列

名字2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

其他

其他2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
國家/地區香港
城市Howloon
期間2005/12/192005/12/21

ASJC Scopus subject areas

  • 電氣與電子工程
  • 電子、光磁材料

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