Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation

This work presents a disordered metadiffuser that can achieve a uniform angular scattering distribution with a numerical aperture (NA) of 0.85 at a working wavelength of λ=532 nm, as demonstrated through simulations using the Gerchberg-Saxton algorithm. Additionally, we demonstrate the capability of the metadiffuser to achieve near diffraction-limit high NA focusing (NA>0.8) through the use of a spatial light modulator and the optical phase conjugation method for wavefront shaping. Finally, we propose a deep ultraviolet (DUV) model-based optical proximity correction (OPC) system that uses optical and photoresist simulations via Hopkins’s partially coherent image formation and fully convolutional networks (FCN). This system enables larger-area device fabrication with DUV lithography while maintaining precise critical dimension (CD) of meta atoms. The proposed OPC system achieves a lithography accuracy with an average ∆CD/CD of 0.235%. These results offer promising implications for the practical application of metadiffusers and the DUV lithography technique in the field of optical devices.