Memtransistor-like operation of devices made by graphene/h-BN/MoS2 van der Waals heterostructure

Shih Po Chien, Bor Wei Liang, Wen Hao Chang, Bo Wen Wang, Yi Jie Feng, Yi Cheng Chen, Yann Wen Lan*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

We present the fabrication and characterization of a flash memory device based on a van der Waals (vdW) heterostructure comprising graphene (Gr), hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2). The device exhibits versatile functionalities and demonstrates memtransistor-like behavior, making it a promising candidate for synaptic devices and neuromorphic computing. The Gr/h-BN/MoS2 heterostructure allows for the manipulation of charge concentration in the floating gate (FG) through control gate voltage (VBG), resulting in conductance switching. Moreover, the overlap structure of the FG and source-drain electrodes enables memtransistor-like operations, where the writing processes rely on the source-drain voltage (VDS). By varying carrier storage concentrations in the Gr-FG, multiple memory states can be achieved, offering analog information processing capabilities. In addition, the combination of dual-input functionality allows for the identification of a substantial on/off ratio even when utilizing a lower reading VDS, consequently strengthening the dependability of the memory state. Our work showcases the great potential of the Gr/h-BN/MoS2 heterostructure for advanced nanoelectronics, providing a platform for the development of computing architectures and neuromorphic systems.

原文英語
文章編號142107
期刊Applied Physics Letters
123
發行號14
DOIs
出版狀態已發佈 - 2023 10月 2

ASJC Scopus subject areas

  • 物理與天文學(雜項)

指紋

深入研究「Memtransistor-like operation of devices made by graphene/h-BN/MoS2 van der Waals heterostructure」主題。共同形成了獨特的指紋。

引用此