Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2gate stack scaling down

Chun Yu Liao, Chen Ying Lin, Zhi Xian Lee, Kuo Yu Hsiang, Zhao Feng Lou, Vita Pi Ho Hu, Min Hung Lee*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Instability threshold voltage (VT) with retention loss of read-after-write is a critical issue with fundamental physics for ferroelectric field effect transistors (FeFETs) scaling down under high-speed operation. The mechanisms including charge trapping and depolarization field (Edep) are discovered and related to surface potential and coercive field (EC). The trapped charge can be effectively detrapped by opposite polarity stimulation and validated by technology computer-aided design modeling. In addition, the Edep is revealed to be serious with ferroelectric HfZrO2 (FE-HZO) thin-down due to the unstable low-VT state at a gate voltage (VG) of 0 V. The tunable base voltage (Vbase) compensates the Edep-based polarization degradation. A stable low-VT read-after-write for a 5-nm-thick HZO FeFET is experimentally demonstrated by the opposite polarity detrapping scheme hybrid with a Vbase optimization simultaneously for a wide range of delay times from 10-7 to 102 s. This result provides the feasibility for scaling down FeFETs for nonvolatile memory applications in the future.

原文英語
文章編號252902
期刊Applied Physics Letters
121
發行號25
DOIs
出版狀態已發佈 - 2022 12月 19

ASJC Scopus subject areas

  • 物理與天文學(雜項)

指紋

深入研究「Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2gate stack scaling down」主題。共同形成了獨特的指紋。

引用此