Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Chuan Hsi Liu; Ming T. Lee; Chih Yung Lin; Jenkon Chen; Y. T. Loh; Fu Tai Liou; Klaus Schruefer; Anastasios A. Katsetos; Zhijian Yang; Nivo Rovedo; Terence B. Hook; Clement Wann; Tze Chiang Chen

doi:10.1143/jjap.41.2423

Mechanism of threshold voltage shift (Δ V_th) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Chuan Hsi Liu^*
, Ming T. Lee
, Chih Yung Lin
, Jenkon Chen
, Y. T. Loh
, Fu Tai Liou
, Klaus Schruefer
, Anastasios A. Katsetos
, Zhijian Yang
, Nivo Rovedo
, Terence B. Hook
, Clement Wann
, Tze Chiang Chen

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

53 引文斯高帕斯（Scopus）

摘要

The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly. Experiments with 1.7 nm to 3.3 nm gate dielectrics fabricated by different processes demonstrate the capability of the proposed model.

原文	英語
頁（從 - 到）	2423-2425
頁數	3
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	41
發行號	4 B
DOIs	https://doi.org/10.1143/jjap.41.2423
出版狀態	已發佈 - 2002 4月
對外發佈	是

ASJC Scopus subject areas

一般工程
一般物理與天文學

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10.1143/jjap.41.2423

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引用此

Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Loh, Y. T., Liou, F. T., Schruefer, K., Katsetos, A. A., Yang, Z., Rovedo, N., Hook, T. B., Wann, C., & Chen, T. C. (2002). Mechanism of threshold voltage shift (Δ V_th) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(4 B), 2423-2425. https://doi.org/10.1143/jjap.41.2423

Mechanism of threshold voltage shift (Δ V_th) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs. / Liu, Chuan Hsi; Lee, Ming T.; Lin, Chih Yung 等.
於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 卷 41, 編號 4 B, 04.2002, p. 2423-2425.

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

Liu, CH, Lee, MT, Lin, CY, Chen, J, Loh, YT, Liou, FT, Schruefer, K, Katsetos, AA, Yang, Z, Rovedo, N, Hook, TB, Wann, C & Chen, TC 2002, 'Mechanism of threshold voltage shift (Δ V_th) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 卷 41, 編號 4 B, 頁 2423-2425. https://doi.org/10.1143/jjap.41.2423

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abstract = "The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly. Experiments with 1.7 nm to 3.3 nm gate dielectrics fabricated by different processes demonstrate the capability of the proposed model.",

keywords = "Device physics, Gate oxide reliability, NBTI",

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AU - Liu, Chuan Hsi

AU - Lee, Ming T.

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AU - Chen, Jenkon

AU - Loh, Y. T.

AU - Liou, Fu Tai

AU - Schruefer, Klaus

AU - Katsetos, Anastasios A.

AU - Yang, Zhijian

AU - Rovedo, Nivo

AU - Hook, Terence B.

AU - Wann, Clement

AU - Chen, Tze Chiang

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Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

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Mechanism of threshold voltage shift (Δ V_th) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs