Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Chuan Hsi Liu*, Ming T. Lee, Chih Yung Lin, Jenkon Chen, Y. T. Loh, Fu Tai Liou, Klaus Schruefer, Anastasios A. Katsetos, Zhijian Yang, Nivo Rovedo, Terence B. Hook, Clement Wann, Tze Chiang Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

52 引文 斯高帕斯(Scopus)

摘要

The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly. Experiments with 1.7 nm to 3.3 nm gate dielectrics fabricated by different processes demonstrate the capability of the proposed model.

原文英語
頁(從 - 到)2423-2425
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
發行號4 B
DOIs
出版狀態已發佈 - 2002 四月
對外發佈

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學 (全部)

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