@article{6dedb809ae0941ec8f8e51c7c7a53995,
title = "Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs",
abstract = "The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly. Experiments with 1.7 nm to 3.3 nm gate dielectrics fabricated by different processes demonstrate the capability of the proposed model.",
keywords = "Device physics, Gate oxide reliability, NBTI",
author = "Liu, {Chuan Hsi} and Lee, {Ming T.} and Lin, {Chih Yung} and Jenkon Chen and Loh, {Y. T.} and Liou, {Fu Tai} and Klaus Schruefer and Katsetos, {Anastasios A.} and Zhijian Yang and Nivo Rovedo and Hook, {Terence B.} and Clement Wann and Chen, {Tze Chiang}",
year = "2002",
month = apr,
doi = "10.1143/jjap.41.2423",
language = "English",
volume = "41",
pages = "2423--2425",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",
}