Mechanism of GeO 2 resistive switching based on the multi-phonon assisted tunneling between traps

A. V. Shaposhnikov; T. V. Perevalov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.1063/1.4729589

Mechanism of GeO ₂ resistive switching based on the multi-phonon assisted tunneling between traps

A. V. Shaposhnikov
, T. V. Perevalov
, V. A. Gritsenko^*
, C. H. Cheng
, A. Chin

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

76 引文斯高帕斯（Scopus）

摘要

Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO ₂ were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO ₂-Ni structure with good semi-quantitative agreement with experiment.

原文	英語
文章編號	243506
期刊	Applied Physics Letters
卷	100
發行號	24
DOIs	https://doi.org/10.1063/1.4729589
出版狀態	已發佈 - 2012 6月 11
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.4729589

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title = "Mechanism of GeO 2 resistive switching based on the multi-phonon assisted tunneling between traps",

abstract = "Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO 2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO 2-Ni structure with good semi-quantitative agreement with experiment.",

author = "Shaposhnikov, \{A. V.\} and Perevalov, \{T. V.\} and Gritsenko, \{V. A.\} and Cheng, \{C. H.\} and A. Chin",

note = "Funding Information: This work was supported by the grant No. 24.18 of Russian Academy of Sciences, grant No. 5.12 of Siberian Branch of Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3. The computations were conducted at the Novosibirsk State University Supercomputer Center.",

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AU - Perevalov, T. V.

AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, A.

N1 - Funding Information: This work was supported by the grant No. 24.18 of Russian Academy of Sciences, grant No. 5.12 of Siberian Branch of Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3. The computations were conducted at the Novosibirsk State University Supercomputer Center.

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N2 - Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO 2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO 2-Ni structure with good semi-quantitative agreement with experiment.

AB - Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO 2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO 2-Ni structure with good semi-quantitative agreement with experiment.

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Mechanism of GeO 2 resistive switching based on the multi-phonon assisted tunneling between traps

摘要

ASJC Scopus subject areas

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Mechanism of GeO ₂ resistive switching based on the multi-phonon assisted tunneling between traps