Mechanism of GeO 2 resistive switching based on the multi-phonon assisted tunneling between traps

A. V. Shaposhnikov, T. V. Perevalov, V. A. Gritsenko*, C. H. Cheng, A. Chin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

47 引文 斯高帕斯(Scopus)

摘要

Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO 2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO 2-Ni structure with good semi-quantitative agreement with experiment.

原文英語
文章編號243506
期刊Applied Physics Letters
100
發行號24
DOIs
出版狀態已發佈 - 2012 六月 11

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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