Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

INIS

• instability 100%
• dynamics 100%
• dielectrics 100%
• mosfet 100%
• range 50%
• charges 50%
• relaxation 50%
• voltage 50%
• oxides 50%
• frequency range 50%
• metals 50%
• mhz range 50%
• semiconductor materials 50%
• field effect transistors 50%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Negative-Bias Temperature Instability 100%
• Oxynitride 100%
• Dielectric Material 100%
• Type Metal 50%

Engineering

• Dynamics of Mechanism 100%