Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

Tung Ming Pan; Chuan Hsi Liu

doi:10.1149/1.2109287

Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

Tung Ming Pan^*
, Chuan Hsi Liu

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔV_th) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.

原文	英語
頁（從 - 到）	G348-G351
期刊	Electrochemical and Solid-State Letters
卷	8
發行號	12
DOIs	https://doi.org/10.1149/1.2109287
出版狀態	已發佈 - 2005
對外發佈	是

ASJC Scopus subject areas

一般化學工程
一般材料科學
物理與理論化學
電化學
電氣與電子工程

存取文件

10.1149/1.2109287

其它文件與鏈接

引用此

@article{76524522078f4abbafefc70876de5e30,

title = "Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 {\aa} oxynitride gate dielectric",

abstract = "In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75\%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.",

author = "Pan, \{Tung Ming\} and Liu, \{Chuan Hsi\}",

year = "2005",

doi = "10.1149/1.2109287",

language = "English",

volume = "8",

pages = "G348--G351",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

AU - Pan, Tung Ming

AU - Liu, Chuan Hsi

PY - 2005

Y1 - 2005

N2 - In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.

AB - In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.

UR - https://www.scopus.com/pages/publications/28044457659

UR - https://www.scopus.com/pages/publications/28044457659#tab=citedBy

U2 - 10.1149/1.2109287

DO - 10.1149/1.2109287

M3 - Article

AN - SCOPUS:28044457659

SN - 1099-0062

VL - 8

SP - G348-G351

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此