In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.
|頁（從 - 到）||G348-G351|
|期刊||Electrochemical and Solid-State Letters|
|出版狀態||已發佈 - 2005|
ASJC Scopus subject areas
- 化學工程 (全部)