Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

Tung Ming Pan*, Chuan-Hsi Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.

原文英語
期刊Electrochemical and Solid-State Letters
8
發行號12
DOIs
出版狀態已發佈 - 2005 十二月 5

ASJC Scopus subject areas

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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