Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Chuan H. Liu; Ming T. Lee; Chin Yung Lin; Jenkon Chen; Klaus Schruefer; James Brighten; Nivo Rovedo; Terence B. Hook; Mukesh V. Khare; Shih Fen Huang; Clement Wann; Tze Chiang Chen; Tak H. Ning

doi:10.1109/IEDM.2001.979649

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Chuan H. Liu
, Ming T. Lee
, Chin Yung Lin
, Jenkon Chen
, Klaus Schruefer
, James Brighten
, Nivo Rovedo
, Terence B. Hook
, Mukesh V. Khare
, Shih Fen Huang
, Clement Wann
, Tze Chiang Chen
, Tak H. Ning

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

51 引文斯高帕斯（Scopus）

摘要

This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.

原文	英語
頁（從 - 到）	861-864
頁數	4
期刊	Technical Digest-International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979649
出版狀態	已發佈 - 2001
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1109/IEDM.2001.979649

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Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Schruefer, K., Brighten, J., Rovedo, N., Hook, T. B., Khare, M. V., Huang, S. F., Wann, C., Chen, T. C., & Ning, T. H. (2001). Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics. Technical Digest-International Electron Devices Meeting, 861-864. https://doi.org/10.1109/IEDM.2001.979649

Liu, CH, Lee, MT, Lin, CY, Chen, J, Schruefer, K, Brighten, J, Rovedo, N, Hook, TB, Khare, MV, Huang, SF, Wann, C, Chen, TC & Ning, TH 2001, 'Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics', Technical Digest-International Electron Devices Meeting, 頁 861-864. https://doi.org/10.1109/IEDM.2001.979649

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abstract = "This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.",

author = "Liu, \{Chuan H.\} and Lee, \{Ming T.\} and Lin, \{Chin Yung\} and Jenkon Chen and Klaus Schruefer and James Brighten and Nivo Rovedo and Hook, \{Terence B.\} and Khare, \{Mukesh V.\} and Huang, \{Shih Fen\} and Clement Wann and Chen, \{Tze Chiang\} and Ning, \{Tak H.\}",

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doi = "10.1109/IEDM.2001.979649",

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AU - Liu, Chuan H.

AU - Lee, Ming T.

AU - Lin, Chin Yung

AU - Chen, Jenkon

AU - Schruefer, Klaus

AU - Brighten, James

AU - Rovedo, Nivo

AU - Hook, Terence B.

AU - Khare, Mukesh V.

AU - Huang, Shih Fen

AU - Wann, Clement

AU - Chen, Tze Chiang

AU - Ning, Tak H.

PY - 2001

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EP - 864

JO - Technical Digest-International Electron Devices Meeting

JF - Technical Digest-International Electron Devices Meeting

ER -

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

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ASJC Scopus subject areas

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