Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Chuan H. Liu, Ming T. Lee, Chin Yung Lin, Jenkon Chen, Klaus Schruefer, James Brighten, Nivo Rovedo, Terence B. Hook, Mukesh V. Khare, Shih Fen Huang, Clement Wann, Tze Chiang Chen, Tak H. Ning

研究成果: 雜誌貢獻期刊論文同行評審

44 引文 斯高帕斯(Scopus)

摘要

This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.

原文英語
頁(從 - 到)861-864
頁數4
期刊Technical Digest-International Electron Devices Meeting
DOIs
出版狀態已發佈 - 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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