Mechanically Strained Strained-Si NMOSFETs

S. Maikap*, C. Y. Yu, S. R. Jan, M. H. Lee, C. W. Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

23 引文 斯高帕斯(Scopus)

摘要

The drain-current enhancement of the mechanically strained strained-Si NMOSFET device is investigated for the first time. The improvements of the drain current are found to be ∼3.4% and ∼6.5% for the strained-Si and control Si devices, respectively, with the channel length of 25 μm at the external biaxial tensile strain of 0.037%, while the drain-current enhancements are ∼2.0% and ∼4.5% for strained-Si and control Si devices, respectively, with the channel length of 0.6 μm. Beside the strain caused by lattice mismatch, the mechanical strain can further enhance the current drive of the strained-Si NMOSFET. The strain distribution due to the mechanical stress has different effect on the current enhancement depending on the strain magnitude and channel direction. The smaller current enhancement for strained-Si device as compared to the control device can be explained by the saturation of mobility enhancement at large strain.

原文英語
頁(從 - 到)40-42
頁數3
期刊IEEE Electron Device Letters
25
發行號1
DOIs
出版狀態已發佈 - 2004 一月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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