Mcroraman study of Ge/Si quantum rings and dots

V. I. Mashanov*, H. H. Cheng, L. J. Chen, C. T. Chia

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

The fabrication and optical measurement of Ge/Si nanostructure was presented. The atomic force microscopy (AFM) was employed to probe the surface morphology, which shows both quantum dots (QD) and quantum rings (QR) shape Ge nanostructure. MicroRaman was performed to characterize the strain and composition QD and QR. The samples were grown by solid source molecular beam epitaxy (MBE) with electron beam evaporators for both Ge and Si. MicroRaman measurements were performed at room temperature and wavelength of 514.5 nm from Ar+ laser was used as the excitation source. The intensity of both Ge-Ge and Si-Ge modes decrease as growth temperature increase. Peak position of the Si-Ge line remains at the same position within ±1 cm-1.

原文英語
主出版物標題2004 1st IEEE International Conference on Group IV Photonics
頁面113-114
頁數2
出版狀態已發佈 - 2004 十二月 1
事件2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, 香港
持續時間: 2004 九月 292004 十月 1

出版系列

名字2004 1st IEEE International Conference on Group IV Photonics

其他

其他2004 1st IEEE International Conference on Group IV Photonics
國家/地區香港
城市Hong Kong, China
期間2004/09/292004/10/01

ASJC Scopus subject areas

  • 工程 (全部)

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