Manipulation of Push–Pull System by Functionalization of Porphyrin at β‐Position for High‐Performance Solution‐Processable Ternary Resistive Memory Devices

Abstract Through tailoring substituents at β‐positions of Ni II porphyrin complexes in a push–pull system, multilevel resistive memory devices with high performance have been realized via solution‐processing fabrications. Promising ternary resistive memory behavior has been demonstrated by distinct “OFF”, “ON1” and “ON2” conductivity states with current ratios of 1:10 4 :10 7 , together with low first switching voltage ( V Th1 =2.1 V), well‐differentiable second threshold voltage ( V Th2 =3.1 V), low power consumption reading bias (1.0 V) as well as long retention time (>10 4 seconds), revealing their potential application in the field of ultra high‐density data storage. In contrast to the push–pull system, only a binary logic gate is found in push only or pull only complexes. The present study may provide a new design strategy and inspiration for the development of multistate memory devices through push–pull systems of this type.