Manipulation of polarization effect to engineer III-nitride HEMTs for normally-off operation

Yung Chi Yao, Chun Ying Huang, Tai Yuan Lin, Li Lien Cheng, Ching Yun Liu, Mei Tan Wang, Jung Min Hwang, Ya Ju Lee*

*此作品的通信作者

研究成果: 雜誌貢獻回顧評介論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

We propose a novel, normally-off AlGaN/GaN high-electron-mobility transistor (HEMT) governed by polarization engineering. The fundamental concept is to grade the Al composition of the barrier layer from GaN to AlxGa1- xN, thereby alleviating the impact of piezoelectric polarization on the two-dimensional electron gas (2-DEG) and establishing a conduction-band profile well above the Fermi energy. These effects lead to a positive shift in the threshold voltage of the device and benefit the normally-off operation. It is observed that the device's DC transfer characteristics can be further modulated simply by adjusting the Al composition of the AlyGa1- yN cap layer and the p-type doping concentration at the top of the GaN buffer layer. These findings, based on a physical simulation of the proposed device, provide a guideline for the implementation of highly efficient, normally-off AlGaN/GaN HEMTs.

原文英語
頁(從 - 到)1-6
頁數6
期刊Microelectronic Engineering
138
DOIs
出版狀態已發佈 - 2015 四月 20

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

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