Manifestations of strain-relaxation in the structure of nano-sized Co-2 × 2 islands grown on Ag/Ge(111)-√3 × √3 surface

Xiao Lan Huang, Agnieszka Tomaszewska, Chun Liang Lin, Sung Lin Tsay, Chi Hao Chou, Tsu Yi Fu*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

We have examined strain-relaxation of Co-2 × 2 islands grown on the Ag/Ge(111)-√3 × √3 surface by analyzing scanning tunneling microscopy images. We have found that the Co-2 × 2 islands commonly adopt a more compact arrangement as compared to that of the Ge(111) substrate, however they differ in a degree of an atomic compactness. We have not found a distinct relation between strain-relaxation and the island height. Three groups of islands have been identified upon analyzing a correspondence between strain-relaxation and the island size: (i) small islands (not bigger than 80 nm 2) with a high atomic compactness, displaying fixed inter-row distances, (ii) small islands with unfixed distances between atomic rows, and (iii) big islands (bigger than 80 nm 2) with fixed inter-row distances, but with a less compact atomic arrangement compared to that of the first two groups. We propose a model to account for the relation between the relaxation and the island size.

原文英語
頁(從 - 到)5304-5308
頁數5
期刊Thin Solid Films
520
發行號16
DOIs
出版狀態已發佈 - 2012 六月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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