摘要
GaN Alx Ga1-x N heterostructures containing a two-dimensional electron gas (2DEG) 27 nm underneath the surface were focused-ion-beam implanted with 300 keV Gd ions at room temperature. At 4.2 K, current-voltage characteristics across implanted rectangles showed that the structures remained conducting up to a Gd dose of 1× 1012 cm-2. Extraordinary Hall effect and anisotropic magnetoresistance were observed at T=4.2 K for structures implanted with 3× 1011 cm-2 Gd. This dose corresponds to a 23% reduction in electron concentration and a decrease in the mobility by a factor of 14 at 4.2 K. However, the still-conducting 2DEG is now embedded in a ferromagnetic semiconductor which opens the possibility to polarize its spins.
原文 | 英語 |
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文章編號 | 112111 |
期刊 | Applied Physics Letters |
卷 | 92 |
發行號 | 11 |
DOIs | |
出版狀態 | 已發佈 - 2008 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 物理與天文學(雜項)