Magnetocurrent in a bipolar spin transistor at room temperature

Y. W. Huang; C. K. Lo; Y. D. Yao; L. C. Hsieh; J. J. Ju; D. R. Huang; J. H. Huang

doi:10.1063/1.1796522

Magnetocurrent in a bipolar spin transistor at room temperature

Y. W. Huang^*, C. K. Lo, Y. D. Yao, L. C. Hsieh, J. J. Ju, D. R. Huang, J. H. Huang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

13 引文斯高帕斯（Scopus）

摘要

A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10^-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.

原文	英語
頁（從 - 到）	2959-2961
頁數	3
期刊	Applied Physics Letters
卷	85
發行號	14
DOIs	https://doi.org/10.1063/1.1796522
出版狀態	已發佈 - 2004 10月 4
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.1796522

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title = "Magnetocurrent in a bipolar spin transistor at room temperature",

abstract = "A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.",

author = "Huang, {Y. W.} and Lo, {C. K.} and Yao, {Y. D.} and Hsieh, {L. C.} and Ju, {J. J.} and Huang, {D. R.} and Huang, {J. H.}",

note = "Funding Information: The authors would like to thank the technical support from the Nano Technology Research Center, ITRI. They are grateful for the financial support by ROC MOEA and NSC under Grant Nos. A331XS3710 and 91-2112-M-006-029,respectively.",

year = "2004",

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doi = "10.1063/1.1796522",

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T1 - Magnetocurrent in a bipolar spin transistor at room temperature

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Hsieh, L. C.

AU - Ju, J. J.

AU - Huang, D. R.

AU - Huang, J. H.

N1 - Funding Information: The authors would like to thank the technical support from the Nano Technology Research Center, ITRI. They are grateful for the financial support by ROC MOEA and NSC under Grant Nos. A331XS3710 and 91-2112-M-006-029,respectively.

PY - 2004/10/4

Y1 - 2004/10/4

N2 - A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.

AB - A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.

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Magnetocurrent in a bipolar spin transistor at room temperature

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