Magnetocurrent in a bipolar spin transistor at room temperature

Y. W. Huang, Chi-Kuen Lo, Y. D. Yao, L. C. Hsieh, J. J. Ju, D. R. Huang, J. H. Huang

研究成果: 雜誌貢獻文章

13 引文 (Scopus)

摘要

A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.

原文英語
頁(從 - 到)2959-2961
頁數3
期刊Applied Physics Letters
85
發行號14
DOIs
出版狀態已發佈 - 2004 十月 4

指紋

emitters
transistors
room temperature
p-n junctions
accumulators
copper
configurations

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

引用此文

Huang, Y. W., Lo, C-K., Yao, Y. D., Hsieh, L. C., Ju, J. J., Huang, D. R., & Huang, J. H. (2004). Magnetocurrent in a bipolar spin transistor at room temperature. Applied Physics Letters, 85(14), 2959-2961. https://doi.org/10.1063/1.1796522

Magnetocurrent in a bipolar spin transistor at room temperature. / Huang, Y. W.; Lo, Chi-Kuen; Yao, Y. D.; Hsieh, L. C.; Ju, J. J.; Huang, D. R.; Huang, J. H.

於: Applied Physics Letters, 卷 85, 編號 14, 04.10.2004, p. 2959-2961.

研究成果: 雜誌貢獻文章

Huang, YW, Lo, C-K, Yao, YD, Hsieh, LC, Ju, JJ, Huang, DR & Huang, JH 2004, 'Magnetocurrent in a bipolar spin transistor at room temperature', Applied Physics Letters, 卷 85, 編號 14, 頁 2959-2961. https://doi.org/10.1063/1.1796522
Huang, Y. W. ; Lo, Chi-Kuen ; Yao, Y. D. ; Hsieh, L. C. ; Ju, J. J. ; Huang, D. R. ; Huang, J. H. / Magnetocurrent in a bipolar spin transistor at room temperature. 於: Applied Physics Letters. 2004 ; 卷 85, 編號 14. 頁 2959-2961.
@article{6e1eb6df9ec14ce19dee0d6273451fdc,
title = "Magnetocurrent in a bipolar spin transistor at room temperature",
abstract = "A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600{\%} and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 {\%}/Oe.",
author = "Huang, {Y. W.} and Chi-Kuen Lo and Yao, {Y. D.} and Hsieh, {L. C.} and Ju, {J. J.} and Huang, {D. R.} and Huang, {J. H.}",
year = "2004",
month = "10",
day = "4",
doi = "10.1063/1.1796522",
language = "English",
volume = "85",
pages = "2959--2961",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Magnetocurrent in a bipolar spin transistor at room temperature

AU - Huang, Y. W.

AU - Lo, Chi-Kuen

AU - Yao, Y. D.

AU - Hsieh, L. C.

AU - Ju, J. J.

AU - Huang, D. R.

AU - Huang, J. H.

PY - 2004/10/4

Y1 - 2004/10/4

N2 - A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.

AB - A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.

UR - http://www.scopus.com/inward/record.url?scp=8344255817&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=8344255817&partnerID=8YFLogxK

U2 - 10.1063/1.1796522

DO - 10.1063/1.1796522

M3 - Article

AN - SCOPUS:8344255817

VL - 85

SP - 2959

EP - 2961

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -