Magneto-current study in a silicon base spin valve transistor

L. C. Hsieh; Y. W. Huang; C. K. Lo; Y. D. Yao; D. R. Huang

doi:10.1016/j.jmmm.2006.02.015

Magneto-current study in a silicon base spin valve transistor

L. C. Hsieh^*
, Y. W. Huang
, C. K. Lo
, Y. D. Yao
, D. R. Huang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor (R_B) was applied to the measurement circuit to replace the base bias (V_B). The MC ratios of the collector current (I_C) can be kept near its maximum value when the emitter bias (V_E) changes several volts for the suitable R_Bs in the experiment, and the results are very close to those of the calculations of computer.

原文	英語
頁（從 - 到）	e270-e272
期刊	Journal of Magnetism and Magnetic Materials
卷	304
發行號	1
DOIs	https://doi.org/10.1016/j.jmmm.2006.02.015
出版狀態	已發佈 - 2006 9月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學

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10.1016/j.jmmm.2006.02.015

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title = "Magneto-current study in a silicon base spin valve transistor",

abstract = "The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor (RB) was applied to the measurement circuit to replace the base bias (VB). The MC ratios of the collector current (IC) can be kept near its maximum value when the emitter bias (VE) changes several volts for the suitable RBs in the experiment, and the results are very close to those of the calculations of computer.",

keywords = "Base resistance, Magneto-current, P-n junction, Spin transistor",

author = "Hsieh, \{L. C.\} and Huang, \{Y. W.\} and Lo, \{C. K.\} and Yao, \{Y. D.\} and Huang, \{D. R.\}",

year = "2006",

month = sep,

doi = "10.1016/j.jmmm.2006.02.015",

language = "English",

volume = "304",

pages = "e270--e272",

journal = "Journal of Magnetism and Magnetic Materials",

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TY - JOUR

T1 - Magneto-current study in a silicon base spin valve transistor

AU - Hsieh, L. C.

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Huang, D. R.

PY - 2006/9

Y1 - 2006/9

N2 - The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor (RB) was applied to the measurement circuit to replace the base bias (VB). The MC ratios of the collector current (IC) can be kept near its maximum value when the emitter bias (VE) changes several volts for the suitable RBs in the experiment, and the results are very close to those of the calculations of computer.

AB - The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor (RB) was applied to the measurement circuit to replace the base bias (VB). The MC ratios of the collector current (IC) can be kept near its maximum value when the emitter bias (VE) changes several volts for the suitable RBs in the experiment, and the results are very close to those of the calculations of computer.

KW - Base resistance

KW - Magneto-current

KW - P-n junction

KW - Spin transistor

UR - https://www.scopus.com/pages/publications/33646873076

UR - https://www.scopus.com/pages/publications/33646873076#tab=citedBy

U2 - 10.1016/j.jmmm.2006.02.015

DO - 10.1016/j.jmmm.2006.02.015

M3 - Article

AN - SCOPUS:33646873076

SN - 0304-8853

VL - 304

SP - e270-e272

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

Magneto-current study in a silicon base spin valve transistor

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