Magneto-current study in a silicon base spin valve transistor

L. C. Hsieh*, Y. W. Huang, C. K. Lo, Y. D. Yao, D. R. Huang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor (RB) was applied to the measurement circuit to replace the base bias (VB). The MC ratios of the collector current (IC) can be kept near its maximum value when the emitter bias (VE) changes several volts for the suitable RBs in the experiment, and the results are very close to those of the calculations of computer.

原文英語
頁(從 - 到)e270-e272
期刊Journal of Magnetism and Magnetic Materials
304
發行號1
DOIs
出版狀態已發佈 - 2006 九月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學

指紋

深入研究「Magneto-current study in a silicon base spin valve transistor」主題。共同形成了獨特的指紋。

引用此