摘要
Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.
原文 | 英語 |
---|---|
頁(從 - 到) | 78-80 |
頁數 | 3 |
期刊 | Journal of Magnetism and Magnetic Materials |
卷 | 282 |
發行號 | 1-3 |
DOIs | |
出版狀態 | 已發佈 - 2004 11月 |
對外發佈 | 是 |
事件 | International Symposium on Advanced Magnetic Technologies - Taipei, 臺灣 持續時間: 2003 11月 13 → 2003 11月 16 |
ASJC Scopus subject areas
- 電子、光磁材料
- 凝聚態物理學