Magnetic and structural properties of Gd-implanted zinc-blende GaN

F. Y. Lo; A. Melnikov; D. Reuter; A. D. Wieck; V. Ney; T. Kammermeier; A. Ney; J. Schörmann; S. Potthast; D. J. As; K. Lischka

doi:10.1063/1.2753113

Magnetic and structural properties of Gd-implanted zinc-blende GaN

F. Y. Lo^*, A. Melnikov, D. Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D. J. As, K. Lischka

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

38 引文斯高帕斯（Scopus）

摘要

Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300 keV Gd3+ ions for doses ranging from 1× 1012 to 1× 1015 cm-2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60 K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.

原文	英語
文章編號	262505
期刊	Applied Physics Letters
卷	90
發行號	26
DOIs	https://doi.org/10.1063/1.2753113
出版狀態	已發佈 - 2007
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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title = "Magnetic and structural properties of Gd-implanted zinc-blende GaN",

abstract = "Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300 keV Gd3+ ions for doses ranging from 1× 1012 to 1× 1015 cm-2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60 K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.",

author = "Lo, {F. Y.} and A. Melnikov and D. Reuter and Wieck, {A. D.} and V. Ney and T. Kammermeier and A. Ney and J. Sch{\"o}rmann and S. Potthast and As, {D. J.} and K. Lischka",

note = "Funding Information: The research was supported by the Deutsche Forschungsgemeinschaft in the framework of the Sonderforschungsbereich 491 and by the European Union under the Marie-Curie Excellence Grant No. MEXT-CT-2004-01495 of the sixth Framework Programme. Two of the authors (D.J.A. and K.L.) would like to thank H. Nagasawa and M. Abe from SiC Development Center, Hoya Corporation for supplying the substrates.",

year = "2007",

doi = "10.1063/1.2753113",

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AU - Lo, F. Y.

AU - Melnikov, A.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Ney, V.

AU - Kammermeier, T.

AU - Ney, A.

AU - Schörmann, J.

AU - Potthast, S.

AU - As, D. J.

AU - Lischka, K.

N1 - Funding Information: The research was supported by the Deutsche Forschungsgemeinschaft in the framework of the Sonderforschungsbereich 491 and by the European Union under the Marie-Curie Excellence Grant No. MEXT-CT-2004-01495 of the sixth Framework Programme. Two of the authors (D.J.A. and K.L.) would like to thank H. Nagasawa and M. Abe from SiC Development Center, Hoya Corporation for supplying the substrates.

PY - 2007

Y1 - 2007

N2 - Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300 keV Gd3+ ions for doses ranging from 1× 1012 to 1× 1015 cm-2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60 K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.

AB - Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300 keV Gd3+ ions for doses ranging from 1× 1012 to 1× 1015 cm-2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60 K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.

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Magnetic and structural properties of Gd-implanted zinc-blende GaN

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